We propose a new approach to improve the quality and to reduce stress: it is necessary to modify the structure of the substrate (compliance substrate) in order to force the system to reduce the defects while increasing the thickness of the layer.

Furthermore, by using the typical bulk growth techniques used for 4H-SiC it is possible to grow bulk 3C-SiC wafers, improving considerably the quality of the material.
Currently silicon is the material of choice for power electronic applications where the inevitable power dissipation requires the use of very heavy and expensive heat sinks. The purpose of these undesirable heat sinks is to manage the device junction temperature, allowing operation in the range where Si devices are able to function. The reason is simple - the low Si band-gap.

The best alternative for these applications is 3C-SiC.

Our Workplan

our steps to sustainable wide-band-gap power devices

Compliance Substrates

Geometric design and modelling of wafer patterning, minimizing residual thermal strain and wafer bowing

Chemical Vapour Deposition

Optimization of epitaxial growth processes of 3C-SiC

Bulk Process for the Production of Wafer

Growth of real bulk size 3C-SiC crystals with a thickness of several mm

Device Demonstrators

Device concepts with potential for operation in high temperature and high radiation environments

Highlights

stay updated with the project progresses

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PARTICIPANTS

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